Successful development of new inorganic flexible thermoelectric materials
Researchers Shi Xun, Chen Lidong, Sun Yiyang, Qiu Pengfei, and other researchers from the Shanghai Institute of Ceramics, Chinese Academy of Sciences have collaborated with Professor He Jian of Clemson University to develop new high-performance inorganic flexible thermoelectric materials and devices based on Ag2S flexible semiconductors . This research opens up a new direction of research on inorganic flexible thermoelectric materials, and solves the initial and most critical difficulty for the development of new technologies for fully flexible thermoelectric conversion based on high-performance inorganic materials. Related research results were recently published in "Energy and Environmental Science".
New high-performance inorganic flexible thermoelectric materials must take into account both good plasticity and thermoelectric properties. The team previously successfully developed Ag2S, the first inorganic flexible semiconductor material at room temperature. This study further synthesized a series of Ag2S materials in which selenium or tellurium was solid-dissolved. The electrical transport performance has been significantly improved, and the thermoelectric figure of merit can be significantly increased to 0.44 at room temperature.
The researchers selected a bending radius of 3 mm for testing, and found that the Ag2S flakes with solid selenium solution after 1,000 repeated bendings showed little change in conductivity and Seebeck coefficient, indicating that the performance of the material is less affected by stress and can meet the requirements of flexibility. Wearable power requirements.
The research team further prepared in-plane thermoelectric power devices based on selenium solid solution Ag2S. At a temperature difference of 20K, the maximum normalized power density reaches 0.08 watts per square centimeter, which is 1 to 2 orders of magnitude higher than the best pure organic thermoelectric devices currently available.
The paper's corresponding author and researcher Chen Lidong said that the new high-performance inorganic flexible thermoelectric materials and devices based on Ag2S flexible semiconductors developed this time can provide excellent flexibility and thermoelectric conversion performance, and have the advantages of environmental friendliness, stability and reliability, and long life. It is expected to be widely used in the new generation of intelligent micro-nano electronic systems represented by distributed, wearable and implantable. (Reporter Huang Xin)
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