Diamond and GaN combined method to improve thermal management
Recently, the National Defense Advanced Research Projects Agency (DARPA)'s Near Junction Heat Transfer (NJTT) project demonstrated the first diamond-based gallium nitride high electron mobility transistor. In earlier tests, the transistor showed a much lower junction temperature than commercial devices, greatly improving the thermal characteristics of the transistor and improving the performance of the RF system.
DARPA project manager Af Rambakon said that diamond-based GaN high electron mobility transistors can provide strong support for next-generation RF amplifiers. The new amplifier is three times smaller than current state-of-the-art GaN amplifiers, enabling RF systems to be smaller, lighter, and less power efficient. Or, the new power amplifier can increase output power by a factor of three to enable communication systems. The signal is stronger and the radar equipment is farther away. Diamond-based GaN amplifiers are more powerful, more efficient, and smaller in size, and can benefit from virtually any RF system.
In MMIC power amplifiers, the few micrometers below the bonding surface is the most intense temperature rise, and the temperature rise is directly related to the thermal conductivity of the entire wafer. The use of a high thermal conductivity substrate combined with GaN can achieve excellent heat and heat dissipation performance, and is expected to substantially improve the heat dissipation limits of current high power RF systems.
Using the novel epitaxial layer transfer method, researchers at Sanwu Semiconductor removed GaN from its growing substrate and bonded it tightly to the diamond substrate. Synthetic diamond has the highest thermal conductivity in man-made materials, more than 10 times that of conventional semiconductor materials.
The NJTT project is part of the DARPA Thermal Management Technology (TMT) project to reduce the thermal impedance of the near-connected region of compound semiconductor devices. The NJTT project began in 2011, and researchers are investigating technologies for transferring gallium nitride from silicon substrates and silicon carbide substrates to epitaxial layers of diamond substrates, as well as direct diamond growth in silicon carbide thermal vias. The TMT project aims to research and optimize other new advances in new nanostructured materials and thermal management systems.
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